Question: For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________?

• 1. 10 IB
• 2. 3 IB
• 3. 2 IB
• 4. 4 IB

Question: The disadvantage of base resistor method of transistor biasing is that it_________________?

• 1. Is complicated
• 2. Is sensitive to changes in ß
• 3. Provides high stability
• 4. None of the above

Question: An ideal value of stability factor is________________?

• 1. 100
• 2. 200
• 3. More than 200
• 4. 1

Question: The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

• 1. One hundredth
• 2. One tenth
• 3. One thousandth
• 4. One millionth

Question: The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

• 1. 100 µA
• 2. 25 µA
• 3. 20 µA
• 4. 50 µA

Question: If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?

• 1. 6 mA
• 2. mA
• 3. 3 mA
• 4. 1 mA

Question: The circuit that provides the best stabilization of operating point is___________________?

• 1. Base resistor bias
• 2. Collector feedback bias
• 3. Potential divider bias
• 4. None of the above

Question: Transistor biasing is generally provided by a_______________?

• 1. Biasing circuit
• 2. Bias battery
• 3. Diode
• 4. None of the above

Question: Transistor biasing is done to keep _____________in the circuit?

• 1. Proper direct current
• 2. Proper alternating current
• 3. The base current small
• 4. Collector current small

Question: For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

• 1. Be zero
• 2. Be 0.01 V
• 3. Not fall below 0.7 V
• 4. Be between 0 V and 0.1 V