Question: The disadvantage of voltage divider bias is that it has _________________?

• 1. High stability factor
• 2. Low base current
• 3. Many resistors
• 4. None of the above

Question: For proper amplification by a transistor circuit, the operating point should be located at the_____________ of the d.c. load line?

• 1. The end point
• 2. Middle
• 3. The maximum current point
• 4. None of the above

Question: Thermal runaway occurs when_________________?

• 1. Collector is reverse biased
• 2. Transistor is not biased
• 3. Emitter is forward biased
• 4. Junction capacitance is high

Question: The operating point ________________ on the a.c. load line?

• 1. Also line
• 2. Does not lie
• 3. May or may not lie
• 4. Data insufficient

Question: The operating point is also called the _______________?

• 1. Cut off point
• 2. Quiescent point
• 3. Saturation point
• 4. None of the above

Question: For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________?

• 1. 10 IB
• 2. 3 IB
• 3. 2 IB
• 4. 4 IB

Question: The disadvantage of base resistor method of transistor biasing is that it_________________?

• 1. Is complicated
• 2. Is sensitive to changes in ß
• 3. Provides high stability
• 4. None of the above

Question: An ideal value of stability factor is________________?

• 1. 100
• 2. 200
• 3. More than 200
• 4. 1

Question: The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

• 1. One hundredth
• 2. One tenth
• 3. One thousandth
• 4. One millionth

Question: The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

• 1. 100 µA
• 2. 25 µA
• 3. 20 µA
• 4. 50 µA